Modeling of GaAs photoconductive switches

Tongyi Zhang; Shunxiang Shi; Renxi Gong; Yanling Sun

doi:10.1117/12.445696

16 October 2001 Modeling of GaAs photoconductive switches

Tongyi Zhang, Shunxiang Shi, Renxi Gong, Yanling Sun

Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445696
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

This research has focused on modeling of optically triggered, high gain nonlinear GaAs switches. A complete model with dynamics of deep level trap, carries, direct band-gap recombination radiation and heat involved has been constructed. The various generation and recombination mechanism have been discussed and presented. Photo-ionization, thermal emission of deep level traps, intrinsic impact ionization, standard Shockley-Read-Hall recombination, direct band-gap recombination and Auger recombination have been considered.

Citation Download Citation

Tongyi Zhang, Shunxiang Shi, Renxi Gong, and Yanling Sun "Modeling of GaAs photoconductive switches", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445696

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