Dry-etch resistance of fluorine functionalized polymers

Meiten Koh; Takuji Ishikawa; Takayuki Araki; Hirokazu Aoyama; Tsuneo Yamashita; Tamio Yamazaki; Hiroyuki Watanabe; Minoru Toriumi; Toshiro Itani

doi:10.1117/12.474246

24 July 2002 Dry-etch resistance of fluorine functionalized polymers

Meiten Koh, Takuji Ishikawa, Takayuki Araki, Hirokazu Aoyama, Tsuneo Yamashita, Tamio Yamazaki, Hiroyuki Watanabe, Minoru Toriumi, Toshiro Itani

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474246
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The reactive ion etch (RIE) properties of fluorine funtionalized polymers in which fluorine atoms were incorporated in the main chain were examined. There was a tendency that the etching rates of these polymers were higher as lower the fluorine contents. The existing four models such as the Ohnishi model, the Kunz model, the Ohfuji model and the Kishimura model were applied to explain the correlation between the etching rates and the polymer compositions or structures, but the errors were too large to explain the relationship. A new model has developed to explain the effect of the fluorine incorporation to the dry etch resistance. The model assumed that there would be a correlation between the number of main chain fluorine atoms and the dry etch resistance, and the main chain fluorine incorporation would increase the dry etch resistance. The model could explain the dry etch resistance of the main chain fluorine incorporated polymers with adequate accuracy.

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Meiten Koh, Takuji Ishikawa, Takayuki Araki, Hirokazu Aoyama, Tsuneo Yamashita, Tamio Yamazaki, Hiroyuki Watanabe, Minoru Toriumi, and Toshiro Itani "Dry-etch resistance of fluorine functionalized polymers", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474246

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