Paper
24 July 2002 Optimization of organic bottom antireflective coatings' compatibility with ArF resists
Zhong Xiang, Jianhui Shan, Eleazar Gonzalez, Hengpeng Wu, Shuji Ding, Mark Neisser, Bang-Chein Ho, Harrison Chen
Author Affiliations +
Abstract
To have excellent compatibility with ArF resists is the goal in development of bottom antireflective coatings (B.A.R.C.) for 193nm lithographic application. We need to be able to adjust chemical compatibility and optical properties of ArF B.A.R.C. to accommodate various film stacks. We need to deliver ArF B.A.R.C. materials with excellent coating uniformity, long shelf life and ultra-low defect level. In the meantime, we also need to improve etch rate of the ArF B.A.R.C.s for shorter etch time. In this paper, we will focus on our recent efforts to optimize the organic ArF B.A.R.C.s' compatibility with ArF resists in the areas mentioned above.
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Zhong Xiang, Jianhui Shan, Eleazar Gonzalez, Hengpeng Wu, Shuji Ding, Mark Neisser, Bang-Chein Ho, and Harrison Chen "Optimization of organic bottom antireflective coatings' compatibility with ArF resists", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474186
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KEYWORDS
Etching

Reflectivity

Fourier transforms

Polymers

193nm lithography

Bottom antireflective coatings

Coating

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