Successful photoresist removal: incorporating chemistry, conditions, and equipment

John C. Moore

doi:10.1117/12.474207

24 July 2002 Successful photoresist removal: incorporating chemistry, conditions, and equipment

John C. Moore

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474207
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The material make-up of photoresists span a wide polarity range and chemistry. Resists contain reactive components which are photochemically triggered to convert and condense to forms that result in a solubility change. When designing a cleaning process, a knowledge of the resist chemistry is fundamental. A DNQ/novolak system may follow a simple dissolution model under normal conditions. However, when the same resist is sent through a dry etch process, crosslinking and metallic impregnation occurs to form a residue that is insoluble by simple dissolution. The same applies for negative-tone resists, where bonds must be broken and a high chemical interaction is needed to facilitate solvent penetration. Negative resists of different chemistry, such as the benzoin/acrylic, trazine/novolak, and azide/isoprene, must be addressed separately for specific polarity and reactant requirements. When dissolving and removing these crosslinked systems, benefits in formulated chemistries such as GenSolveTM and GenCleanTM are immediately observed. Once the chemistry is identified, conditions can be optimized with process design using temperature, agitation, and rinsing to achieve a robust process with a wide process latitude.

Citation Download Citation

John C. Moore "Successful photoresist removal: incorporating chemistry, conditions, and equipment", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474207

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