Correlating structure and photophysics in erbium-doped silicon nanocrystals

Jeffrey L. Coffer; Robert A. Senter; Junmin Ji

doi:10.1117/12.451243

15 November 2002 Correlating structure and photophysics in erbium-doped silicon nanocrystals

Jeffrey L. Coffer, Robert A. Senter, Junmin Ji

Proceedings Volume 4807, Physical Chemistry of Interfaces and Nanomaterials; (2002) https://doi.org/10.1117/12.451243
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Silicon's position as the semiconductor of choice in micro/nanoelectronics hinges on its ability to shift to new design paradigms such as opto-electronics. Strategies to produce silicon-based light emitters remain limited, however, relying either on quantum confinement effects or optically-active dopants. We are actively studying the effects of incorporating optically-active Erbium centers into discrete crystalline Si nanocrystals. Such nanocrystals have been prepared via the pyrolysis of disilanein the presence of a suitable Er source. Two rather different types of doped materials have been synthesized to date: one involving a random distribution of erbium centers throughout the nanocrystal; the other forces erbium into a location preferentially-enriched near the surface. This work entails the structural characterization of such materials and their photophysical properties, including spectroscopic measurements under the conditions of high pressure.

Citation Download Citation

Jeffrey L. Coffer, Robert A. Senter, and Junmin Ji "Correlating structure and photophysics in erbium-doped silicon nanocrystals", Proc. SPIE 4807, Physical Chemistry of Interfaces and Nanomaterials, (15 November 2002); https://doi.org/10.1117/12.451243

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