VCSEL technologies and applications

Gunther Steinle; A. Ramakrishnan; D. Supper; Guenter Kristen; J. Pfeiffer; Ch. Degen; Henning Riechert; G. Ebbinghaus; H. D. Wolf

doi:10.1117/12.475556

11 July 2002 VCSEL technologies and applications

Gunther Steinle, A. Ramakrishnan, D. Supper, Guenter Kristen, J. Pfeiffer, Ch. Degen, Henning Riechert, G. Ebbinghaus, H. D. Wolf

Author Affiliations +

Proceedings Volume 4870, Active and Passive Optical Components for WDM Communications II; (2002) https://doi.org/10.1117/12.475556
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States

Abstract

VCSEL devices for 850nm and 1300nm emission wavelength are presented, suitable for operation in single-channel interconnects as well as parallel optical links. Necessary properties for applications such as 10 Gigabit Ethernet and actual limits for the use of VCSELs are discussed in some detail. Recent progress is demonstrated in developing devices with production-friendly diameters larger than 5µm for 10Gbit/s operation. Also devices with a temperature insensitive monolithically integrated monitordiode are presented and discussed. In order to reach the emission wavelength of 1300nm with a GaAs-based monolithic VCSEL-structure, we use GaInNxAs1-x quantum-wells with a small nitrogen concentration x between one and two percent. We have two different growth approaches, such as solid source MBE with a rf-plasma source to produce reactive nitrogen from nitrogen gas N2 and MOCVD with unsymmetrical di-methylhydrazine as a precursor for nitrogen. The long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. Bitrates up to 10Gbit/s per channel can be achieved within both wavelength regimes.

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Gunther Steinle, A. Ramakrishnan, D. Supper, Guenter Kristen, J. Pfeiffer, Ch. Degen, Henning Riechert, G. Ebbinghaus, and H. D. Wolf "VCSEL technologies and applications", Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002); https://doi.org/10.1117/12.475556

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KEYWORDS

Vertical cavity surface emitting lasers

Sensors

Mirrors

Nitrogen

Quantum wells

Metalorganic chemical vapor deposition

Modulation

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