Carrier transport and trapping process in photorefractive CdTe:V

Yurij P. Gnatenko; Yuri P. Piryatinski; I. O. Faryna; P. M. Bukivskij; Roman V. Gamernyk; S. Yu. Paranchych; L. D. Paranchych

doi:10.1117/12.475707

30 May 2003 Carrier transport and trapping process in photorefractive CdTe:V

Yurij P. Gnatenko, Yuri P. Piryatinski, I. O. Faryna, P. M. Bukivskij, Roman V. Gamernyk, S. Yu. Paranchych, L. D. Paranchych

Author Affiliations +

Proceedings Volume 4992, Ultrafast Phenomena in Semiconductors VII; (2003) https://doi.org/10.1117/12.475707
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Time-resolved photoelectric spectroscopy measurements of photorefractive CdT:V crystals were carried out by using a short light pulse with 9 ns duration from a nitrogen laser 337.1 nm. The light pulse was focused through the semitransparency Au-electrode. The stationary monochromatic illumination of crystals allowed to measure the time-resolved photocurrent, which is caused by the detrapping of electrons photogenerated by the pulse laser excitation. The dependence of intensity of pulse photocurrent at the delay time (formula available in paper), which corresponds to its maximum value, on the energy of additional monochromatic illumination was investigated. In the case, the spectral dependence of pulse photocurrent caused by the detrapping process of electrons in CdTe:V crystals has been measured under the different intensity of the electric field. It was shown that the additional illumination at (formula available in paper)leads to the increasing of photocurrent intensity that is caused by the detrapping processes of electrons from impurity centers and intrinsic defects. Obtained results indicate that CdTe:V crystals are high-sensitive ultrafast photorefractive materials which may be also used for the elaboration of fast photodetectors in the near IR-region.

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Yurij P. Gnatenko, Yuri P. Piryatinski, I. O. Faryna, P. M. Bukivskij, Roman V. Gamernyk, S. Yu. Paranchych, and L. D. Paranchych "Carrier transport and trapping process in photorefractive CdTe:V", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); https://doi.org/10.1117/12.475707

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