Extremely high breakdown voltage in high-brightness InGaN LEDs

K. R. Wang; S. C. Huang; M. F. Yeh; Y. T. Chung; Y. W. Chang; C. J. Sun; C. T. Chung; Chuong A. Tran

doi:10.1117/12.485631

3 July 2003 Extremely high breakdown voltage in high-brightness InGaN LEDs

K. R. Wang, S. C. Huang, M. F. Yeh, Y. T. Chung, Y. W. Chang, C. J. Sun, C. T. Chung, Chuong A. Tran

Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.485631
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

High-brightness InGaN light emitting diodes (LEDs) with an output power of 2.7, 2.3, and 1.8 mW at a driving current of 20 mA for the emitting wavelength of 470, 505, and 525 nm, respectively, were realized using metalorganic vapor phase epitaxy. The I-V characteristic of these devices experiences a reverse-bias voltage higher than 60 V for a leak current of 10 μA. We find out that the dislocation density in the n-GaN layer is crucial to achieve such high breakdown voltage. By varying growth parameters, we can tune the breakdown voltage from 10 V to 60 V.

Citation Download Citation

K. R. Wang, S. C. Huang, M. F. Yeh, Y. T. Chung, Y. W. Chang, C. J. Sun, C. T. Chung, and Chuong A. Tran "Extremely high breakdown voltage in high-brightness InGaN LEDs", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.485631

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