Paper
14 April 2003 Nonelastic electron scattering in HgTe
O. P. Malyk
Author Affiliations +
Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502180
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
By exact solution of stationary Boltzmann equation the nonequilibrium charge carrier distribution function is obtained. In the temperature range 4.2 - 300 K the main electron scattering mechanism are considered taking into account the nonelastic electron interaction with optical vibrations of the crystal lattice.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. P. Malyk "Nonelastic electron scattering in HgTe", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502180
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KEYWORDS
Scattering

Phonons

Crystals

Crystal optics

Temperature metrology

Calcium

Picture Archiving and Communication System

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