A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage

Semih Senkader; M. M. Aziz; Christopher David Wright

doi:10.1117/12.532526

16 September 2003 A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage

Semih Senkader, M. M. Aziz, Christopher David Wright

Author Affiliations +

Proceedings Volume 5069, Optical Data Storage 2003; (2003) https://doi.org/10.1117/12.532526
Event: Optical Data Storage 2003, 2003, Vancouver, Canada

Abstract

We have developed a model to simulate the phase-change behavior of GeSbTe thin film alloys. Based on classical nucleation theory we described formation of crystalline clusters using chemical rate equations. Assuming that the phase-change proceeds by interactions of single GeSbTe molecules with growing or decaying crystalline clusters we used a set of differential equations to account for the population density changes of clusters. We defined reaction rates encountered in model equations by considering possible molecular processes during the phase-change process. To validate the model we simulated experiments taken from the literature. It can predict the kinetics of crystallization well, describe transient effectis correctly, and consider influecnes of substrates on crystallization successfully.

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Semih Senkader, M. M. Aziz, and Christopher David Wright "A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage", Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); https://doi.org/10.1117/12.532526

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