Paper
8 August 2003 Annealing of radiation defects in x-irradiated LiBaF3
Peteris Kulis, Uldis Rogulis, Maris Springis, Ivars Tale, Aris Veispals, Valters Ziraps
Author Affiliations +
Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515699
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Results of the glow rate technique application for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in pure and containing oxygen centers LiBaF3 crystals are presented. It is shown that depending on the impurity composition two alternative mechanisms could be involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F-centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F-type centers are responsible for the recombination of radiation defects above RT.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peteris Kulis, Uldis Rogulis, Maris Springis, Ivars Tale, Aris Veispals, and Valters Ziraps "Annealing of radiation defects in x-irradiated LiBaF3", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515699
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KEYWORDS
Absorption

Color centers

Fluorine

Crystals

Annealing

Chemical species

Oxygen

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