The analysis of ion-selective field-effect transistor operation in chemical sensors

Zenon Hotra; Roman Holyaka; Michael Hladun; Iryna Humenuk

doi:10.1117/12.517063

22 September 2003 The analysis of ion-selective field-effect transistor operation in chemical sensors

Zenon Hotra, Roman Holyaka, Michael Hladun, Iryna Humenuk

Proceedings Volume 5124, Optoelectronic and Electronic Sensors V; (2003) https://doi.org/10.1117/12.517063
Event: Optoelectronic and Electronic Sensors V, 2002, Rzeszow, Poland

Abstract

In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.

Citation Download Citation

Zenon Hotra, Roman Holyaka, Michael Hladun, and Iryna Humenuk "The analysis of ion-selective field-effect transistor operation in chemical sensors", Proc. SPIE 5124, Optoelectronic and Electronic Sensors V, (22 September 2003); https://doi.org/10.1117/12.517063

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