Properties of Schottky-barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectric

V. Damnjanovic; V. P. Ponomarenko

doi:10.1117/12.517318

30 September 2003 Properties of Schottky barrier p-Cd_xHg_1-xTe structures with metal-tunnel transparent dielectric

V. Damnjanovic, V. P. Ponomarenko

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517318
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Potential barriers in Schottky diodes with a metal-tunnel transparent dielectric based on Cd_xHg_1-xTe (CMT) with x~0.2 have been studied. We used In, Tn, Al and Cr as metal barriers. Superthin dielectric, Al₂O₃ and fluorine plasma films were deposited between the CMT surface and a metal.

Citation Download Citation

V. Damnjanovic and V. P. Ponomarenko "Properties of Schottky barrier p-Cd_xHg_1-xTe structures with metal-tunnel transparent dielectric", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517318

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