Change of spectrums of electroluminescence epitaxial lightdiode structures during an acoustic emission

Oleg V. Lyashenko; Yuriy O. Myagchenko; Vitaliy P. Veleshchuk

doi:10.1117/12.569616

20 July 2004 Change of spectrums of electroluminescence epitaxial lightdiode structures during an acoustic emission

Oleg V. Lyashenko, Yuriy O. Myagchenko, Vitaliy P. Veleshchuk

Proceedings Volume 5507, XVI International Conference on Spectroscopy of Molecules and Crystals; (2004) https://doi.org/10.1117/12.569616
Event: XVI International Conference on Spectroscopy of Molecules and Crystals, 2003, Sevastopol, Ukraine

Abstract

For the first time it is shown, that the correlation in changes of electroluminescence spectrum and a threshold of origin of an acoustic emission in epitaxial lightdiode n⁺-n-p-structures GaP_0.85As_0.15 takes place. It is shown, that the density of a direct current of diode determines intensity of discrete acoustic emission, detrusion and redistribution of intensity in maximums of an electroluminescence spectrum, velocity and quantity of a degradation of emissive power.

Citation Download Citation

Oleg V. Lyashenko, Yuriy O. Myagchenko, and Vitaliy P. Veleshchuk "Change of spectrums of electroluminescence epitaxial lightdiode structures during an acoustic emission", Proc. SPIE 5507, XVI International Conference on Spectroscopy of Molecules and Crystals, (20 July 2004); https://doi.org/10.1117/12.569616

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