Raman spectroscopy of annealed InAlAs quantum dots

Bin Wang; Xiaoxuan Xu; Yongchun Shu; Jianghong Yao; Zhangcheng Xu

doi:10.1117/12.575539

9 February 2005 Raman spectroscopy of annealed InAlAs quantum dots

Bin Wang, Xiaoxuan Xu, Yongchun Shu, Jianghong Yao, Zhangcheng Xu

Proceedings Volume 5635, Nanophotonics, Nanostructure, and Nanometrology; (2005) https://doi.org/10.1117/12.575539
Event: Photonics Asia, 2004, Beijing, China

Abstract

Raman spectra of In_0.65Al_0.35As quantum dots (QDs) embedded between GaAlAs and GaP have been measured at room temperature. For the as-grown sample, in addition to the TO/LO modes from GaAs substrate, a weak broad peak appears from 165 cm^-1 to 203 cm^-1, corresponding to the interface mode of InAlAs QDs. The AlAs-like and GaP-like modes can be clearly seen at 382 cm^-1. For the annealed samples, the AlAs and GaP-like modes disappeared, while the InAs-like modes become stronger, indicating strong intermixing between QDs and the matrix and the formation of uniform InGaAlAsP alloy.

Citation Download Citation

Bin Wang, Xiaoxuan Xu, Yongchun Shu, Jianghong Yao, and Zhangcheng Xu "Raman spectroscopy of annealed InAlAs quantum dots", Proc. SPIE 5635, Nanophotonics, Nanostructure, and Nanometrology, (9 February 2005); https://doi.org/10.1117/12.575539

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