GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-µm range

Yves Rouillard; J. Angellier; A. Salhi; P. Grech; France Chevrier

doi:10.1117/12.597118

1 April 2005 GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-μm range

Yves Rouillard, J. Angellier, A. Salhi, P. Grech, France Chevrier

Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.597118
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We review here our results concerning laser diodes emitting at 2.38 µm and 2.60 μm. We present an original method allowing to determine the monomolecular, radiative and Auger recombination coefficients A, B and C, as well as the transparency carrier density N_tr, the internal loss α_i and the gain coefficient g_o from the differential efficiency and the threshold current density obtained with different laser diodes. We show how these parameters can be used to optimize the number of quantum wells and explain the differences existing between laser diodes emitting at 2.38 and 2.60 μm. At 2.38 μm, we obtained a threshold current density of 76 A/cm² with a single quantum well laser diode and at 2.60 μm, a J_th of 152 A/cm² with a double quantum well laser diode. These threshold current densities can be compared favorably to the best reported values in the 0.85-3.0 mu;m range.

Citation Download Citation

Yves Rouillard, J. Angellier, A. Salhi, P. Grech, and France Chevrier "GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-μm range", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.597118

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