Properties of pulsed laser deposited Bi2(m+n)Te3 thin films

Martin Pavelka; Radek Zeipl; Miroslav Jelinek; Jarmila Walachova; Vaclav Studnicka

doi:10.1117/12.617336

22 April 2005 Properties of pulsed laser deposited Bi_2(m+n)Te3 thin films

Martin Pavelka, Radek Zeipl, Miroslav Jelinek, Jarmila Walachova, Vaclav Studnicka

Proceedings Volume 5830, 13th International School on Quantum Electronics: Laser Physics and Applications; (2005) https://doi.org/10.1117/12.617336
Event: 13th International School on Quantum Electronics: Laser Physics and Applications, 2004, Bourgas, Bulgaria

Abstract

The Bi₂Te₃ thin films with various thicknesses were prepared by laser ablation in vacuum using the KrF excimer laser. The energy density of laser was set at 5 J/cm² (resp. at 2 J/cm² in the second experiment). The substrate temperature was held at 410 °C. The influence of thickness on the Hall mobility and conductivity at room temperature is presented.

Citation Download Citation

Martin Pavelka, Radek Zeipl, Miroslav Jelinek, Jarmila Walachova, and Vaclav Studnicka "Properties of pulsed laser deposited Bi_2(m+n)Te3 thin films", Proc. SPIE 5830, 13th International School on Quantum Electronics: Laser Physics and Applications, (22 April 2005); https://doi.org/10.1117/12.617336

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