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A technology of solid-phase growth of Mg2Si thin films from Mg and Si layers on a pre-fabricated template layer of Mg2Si islands on Si (111) has been developed. The optimum temperature (T=550° C) for growth of epitaxial Mg2Si films on Si (111) has been found. It has been shown from optical spectroscopy data that Mg2Si epitaxial film has a direct fundamental transition with the energy of 0.75-0.76 eV with small combined density of states. It represents transition of small number of valence electrons into Mg-Si bonding states in the conductance band. The strong absorption range (1.9-6.2 eV) corresponds to transitions from bonding to anti-bonding states.
N. G. Galkin,S. V. Vavanova,K. N. Galkin, andA. M. Maslov
"Solid phase growth and properties of Mg2Si epitaxial films on Si(111)", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634544
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N. G. Galkin, S. V. Vavanova, K. N. Galkin, A. M. Maslov, "Solid phase growth and properties of Mg2Si epitaxial films on Si(111)," Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634544