Evaluation of defect repair of EUV mask absorber layer

Tsukasa Abe; Tsuyoshi Amano; Hiroshi Mohri; Naoya Hayashi; Yuusuke Tanaka; Fumiaki Kumasaka; Iwao Nishiyama

doi:10.1117/12.617273

28 June 2005 Evaluation of defect repair of EUV mask absorber layer

Tsukasa Abe, Tsuyoshi Amano, Hiroshi Mohri, Naoya Hayashi, Yuusuke Tanaka, Fumiaki Kumasaka, Iwao Nishiyama

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617273
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

Nano-machining repair technique is relatively new technology for photomask repairing. The advantages of this technique are low substrate damage, precise edge placement accuracy and improved Z height accuracy comparison with Laser zapper or FIB GAE repair techniques. In this work, we have evaluated nano-machining technique capability for EUV mask repair. To get good wafer print results, additional side etch(X bias) and depth etch (Z bias) were needed. Defect repaired region was evaluated using CD-SEM, AFM and wafer print test. Good repair profile and good wafer print results were successfully obtained.

Citation Download Citation

Tsukasa Abe, Tsuyoshi Amano, Hiroshi Mohri, Naoya Hayashi, Yuusuke Tanaka, Fumiaki Kumasaka, and Iwao Nishiyama "Evaluation of defect repair of EUV mask absorber layer", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617273

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