Silicon photodetectors for longwave infrared focal plane arrays

Vladimir V. Chernokozhin

doi:10.1117/12.637768

6 December 2006 Silicon photodetectors for longwave infrared focal plane arrays

Vladimir V. Chernokozhin

Proceedings Volume 5944, Smart Imagers and Their Application; 594402 (2006) https://doi.org/10.1117/12.637768
Event: Smart Imagers and Their Application, 2004, Moscow, Russian Federation

Abstract

Review on peculiarities and tendencies of multielement JR photodetectors development are considered. The place and prospects of extrinsic silicon longwave JR sensors and focal plane arrays (FPAs) are discussed. The achieved results and predicted characteristics show, that these devices are capable to provide the highest photoelectric characteristics and simultaneously cheapness, productivity, high reliability and durability of longwave JR photodetection devices.

Citation Download Citation

Vladimir V. Chernokozhin "Silicon photodetectors for longwave infrared focal plane arrays", Proc. SPIE 5944, Smart Imagers and Their Application, 594402 (6 December 2006); https://doi.org/10.1117/12.637768

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