Single nanoparticle semiconductor devices

Yongping Ding; Ying Dong; Ameya Bapat; Julia Deneen; C. Barry Carter; Uwe R. Kortshagen; Stephen A. Campbell

doi:10.1117/12.630852

22 November 2005 Single nanoparticle semiconductor devices

Yongping Ding, Ying Dong, Ameya Bapat, Julia Deneen, C. Barry Carter, Uwe R. Kortshagen, Stephen A. Campbell

Proceedings Volume 6002, Nanofabrication: Technologies, Devices, and Applications II; 60020I (2005) https://doi.org/10.1117/12.630852
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

Using a new technique for forming cubic, single crystal silicon nanoparticles about 40 nm on a side, the authors have demonstrated a vertical flow, surround gate, Schottky barrier transistor. This approach allows the use of well known approaches to surface passivation and contact formation within the context of deposited single crystal materials for device applications. It opens the door to novel three dimensional integrated circuits and new approaches to hyper-integration. The fabrication process involves successive deposition and planarization and does not require any type of nonoptical lithography. Device characteristics show reasonable turn- off characteristics and on-current densities of more than 10⁷ A/cm².

Citation Download Citation

Yongping Ding, Ying Dong, Ameya Bapat, Julia Deneen, C. Barry Carter, Uwe R. Kortshagen, and Stephen A. Campbell "Single nanoparticle semiconductor devices", Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020I (22 November 2005); https://doi.org/10.1117/12.630852

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