Paper
5 January 2006 Specific contact resistivity of Al-NiSi contacts using Cross Kelvin Resistor test structure chains
Anthony S. Holland, Madhu Bhaskaran, Sharath Sriram, Geoffrey K. Reeves, Vykundh Ravichandran, Vishal Dodhu Borase, Shreekkanth Bhaskaran
Author Affiliations +
Proceedings Volume 6035, Microelectronics: Design, Technology, and Packaging II; 60350X (2006) https://doi.org/10.1117/12.650699
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia
Abstract
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance as thin films and because they form contacts with relatively low values of specific contact resistivity leading overall to low values of contact resistance. Determining the true values of the specific contact resistivity of metal-to-silicide interfaces is a challenge that requires suitable test structures. The Cross Kelvin Resistor (CKR) structure is a commonly used test structure for the extraction of the specific contact resistance of ohmic contacts. Analysis using this structure has errors associated with it and the challenge is often in determining this error. This paper demonstrates a technique that uses several Cross Kelvin Resistor structures connected in a chain and determines the specific contact resistance of aluminium to nickel silicide contacts using extrapolation rather than determining the error. The formation of the nickel silicide films and the fabrication and testing results for the Cross Kelvin Resistor structures are presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony S. Holland, Madhu Bhaskaran, Sharath Sriram, Geoffrey K. Reeves, Vykundh Ravichandran, Vishal Dodhu Borase, and Shreekkanth Bhaskaran "Specific contact resistivity of Al-NiSi contacts using Cross Kelvin Resistor test structure chains", Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 60350X (5 January 2006); https://doi.org/10.1117/12.650699
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KEYWORDS
Nickel

Silicon

Resistors

Resistance

Metals

Aluminum

Sputter deposition

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