Optical spatial heterodyned interferometry for applications in semiconductor inspection and metrology

Kenneth W. Tobin; Philip R. Bingham

doi:10.1117/12.674946

9 June 2006 Optical Spatial Heterodyned Interferometry for Applications in Semiconductor Inspection and Metrology

Kenneth W. Tobin, Philip R. Bingham

Proceedings Volume 6162, International Conference on Lasers, Applications, and Technologies 2005: Laser Sensing, Imaging, and Information Technologies; 616203 (2006) https://doi.org/10.1117/12.674946
Event: International Conference on Lasers, Applications, and Technologies 2005, 2005, St. Petersburg, Russian Federation

Abstract

Interferometric imaging has the potential to extend the usefulness of optical microscopes by encoding small phase shifts that reveal information about topology and materials. At the Oak Ridge National Laboratory (ORNL), we have developed an optical Spatial Heterodyne Interferometry (SHI) method that captures reflection or transmission images containing both phase and amplitude information at a high rate of speed. By measuring the phase of a wavefront reflected off or transmitted through a surface, the relative surface heights and some materials properties can be determined. In this paper we briefly review a variety of application areas where this technology has been applied including semiconductor wafer inspection, photolithographic mask metrology and inspection, and we conclude with a discussion regarding future work to apply SHI to MEMS device characterization.

Citation Download Citation

Kenneth W. Tobin and Philip R. Bingham "Optical Spatial Heterodyned Interferometry for Applications in Semiconductor Inspection and Metrology", Proc. SPIE 6162, International Conference on Lasers, Applications, and Technologies 2005: Laser Sensing, Imaging, and Information Technologies, 616203 (9 June 2006); https://doi.org/10.1117/12.674946

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