Low-temperature annealing of ion-doped layers of silicon in hydrogen atom flow

V. Kagadei; E. Nefyodtsev; S. Romanenko

doi:10.1117/12.676913

10 June 2006 Low-temperature annealing of ion-doped layers of silicon in hydrogen atom flow

V. Kagadei, E. Nefyodtsev, S. Romanenko

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626004 (2006) https://doi.org/10.1117/12.676913
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

Investigation of low-temperature annealing of Si samples implanted by As⁺ and Sb⁺ ions under influence of intensive low-energy hydrogen atom flow (j = 10¹⁵ cm^-2 s^-1) was carried out. It was shown, that samples, annealed in atomic hydrogen, have increased mobility and concentration of charge carriers, in comparison with samples annealed in vacuum. The phenomenon was observed in the temperature interval 300-500°C and it was investigated by Hall effect method and Reserford Backscattering Spectroscopy (RBS) of He⁺ ions. Positive influence of atomic hydrogen on electrical parameters of implanted layers was already revealed in the case of short process duration (5 minutes) and it was most brightly revealed at T = 300-400°C. At the same time, the influence of atomic hydrogen on annealing of self-interstitial defects in Si samples, implanted by Sb⁺ ions with doze 3×10¹⁴ cm^-2, was insignificant. Moreover, in the case of low implantation doze (3×10¹³ cm^-2) atomic hydrogen reduces defect annealing. Factors that may be responsible for existence of hydrogen-stimulated annealing phenomenon of implanted layers are discussed.

Citation Download Citation

V. Kagadei, E. Nefyodtsev, and S. Romanenko "Low-temperature annealing of ion-doped layers of silicon in hydrogen atom flow", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626004 (10 June 2006); https://doi.org/10.1117/12.676913

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