Paper
10 June 2006 Synthesis of AIIBVI semiconductor nanocrystals by electrochemical deposition and SILAR techniques
D. A. Kravtchenko, S. A. Gavrilov, A. V. Zheleznyakova, E. V. Vishnikin
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600E (2006) https://doi.org/10.1117/12.677059
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
We considered the basic principles of AIIBVI (CdS) semiconductor deposition from aqueous solution by ECD and SILAR methods. Obtained results confirm that quality of CdS film synthesized by electrodeposition is practically identical to single crystal quality. The SILAR deposition allowed us to investigate quantum confinement in CdS nanocrystals.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. A. Kravtchenko, S. A. Gavrilov, A. V. Zheleznyakova, and E. V. Vishnikin "Synthesis of AIIBVI semiconductor nanocrystals by electrochemical deposition and SILAR techniques", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600E (10 June 2006); https://doi.org/10.1117/12.677059
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KEYWORDS
Cadmium sulfide

Semiconductors

Nanocrystals

Luminescence

Electrodes

Oxides

Refractive index

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