Paper
10 June 2006 An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits
I. I. Abramov
Author Affiliations +
Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601I (2006) https://doi.org/10.1117/12.683496
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
An automatic synthesis method of equivalent circuits of integrated circuit devices is described in the paper. This method is based on a physical approach to construction of finite-difference approximation to basic equations of semiconductor device physics. It allows to synthesize compact equivalent circuits of different devices automatically as alternative to, for example, sufficiently formal BSIM2 and BSIM3 models used in circuit simulation programs of SPICE type. The method is one of possible variants of general methodology for automatic synthesis of compact equivalent circuits of almost arbitrary devices and circuit-type structures of micro- and nanoelecronics [1]. The method is easily extended in the case of necessity to account thermal effects in integrated circuits. It was shown that its application would be especially perspective for analysis of integrated circuit fragments as a whole and for identification of significant collective physical effects, including parasitic effects in VLSI and ULSI. In the paper the examples illustrating possibilities of the method for automatic synthesis of compact equivalent circuits of some of semiconductor devices and integrated circuit devices are considered. Special attention is given to examples of integrated circuit devices for coarse grids of spatial discretization (less than 10 nodes).
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. I. Abramov "An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601I (10 June 2006); https://doi.org/10.1117/12.683496
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KEYWORDS
Integrated circuits

Semiconductors

Instrument modeling

Circuit switching

Device simulation

Integrated modeling

Thermal effects

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