Simulating the process of dielectric substrate surface cleaning in high-voltage gas discharge plasma

N. L. Kazanskiy; V. A. Kolpakov; S. V. Kritchevskiy

doi:10.1117/12.683578

10 June 2006 Simulating the process of dielectric substrate surface cleaning in high-voltage gas discharge plasma

N. L. Kazanskiy, V. A. Kolpakov, S. V. Kritchevskiy

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601V (2006) https://doi.org/10.1117/12.683578
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The mechanism of dielectric substrate surface cleaning in low-temperature high-voltage gas discharge plasma is theoretically and experimentally investigated. It is shown that the main technological factors that affect surface purity are the time of exposure, discharge current, accelerating voltage. A unique relationship is obtained that relates the value of impurity surface concentration variation to the speed of removing the impurities and exposure duration. It is shown that experimental data agree well with this relationship. It is established that minimal values of impurity surface concentration are achieved at the exposure time no less than 10 seconds, discharge current no less than 3 mA and accelerating voltage of 2-3 kV. An actual example of etching silicon dioxide grooves in high-voltage gas discharge plasma in the mixture of CF₄ and O₂ is taken to show how substrate surface purity affects geometric parameters of microstructures formed. The results of the investigation made it possible to develop a method of cleaning dielectric substrate surface in high-voltage gas discharge plasma. The method is characterized by low cost and energy consumption. It makes it possible to clean a surface up to the level of 10^-9 g/cm².

Citation Download Citation

N. L. Kazanskiy, V. A. Kolpakov, and S. V. Kritchevskiy "Simulating the process of dielectric substrate surface cleaning in high-voltage gas discharge plasma", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601V (10 June 2006); https://doi.org/10.1117/12.683578

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KEYWORDS

Plasma

Etching

Molecules

Ions

Cadmium

Oxygen

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