Behavioral modeling to circuit design steps of switched-current second order sigma-delta modulator

Jierong Guo; Yigang He; Shengxue Tang; Hongmin Li

doi:10.1117/12.718256

30 October 2006 Behavioral modeling to circuit design steps of switched-current second order sigma-delta modulator

Jierong Guo, Yigang He, Shengxue Tang, Hongmin Li

Proceedings Volume 6358, Sixth International Symposium on Instrumentation and Control Technology: Sensors, Automatic Measurement, Control, and Computer Simulation; 635853 (2006) https://doi.org/10.1117/12.718256
Event: Sixth International Symposium on Instrumentation and Control Technology, 2006, Beijing, China

Abstract

In this paper the design and simulation procedure of a A 3.3 V, 10 Bits Switched-Current Second Order Sigma-Delta Modulator is discussed. The circuit non-idealities of the modulator such as charge injection errors, conductance ratio error, settling error and kT/C noise are modeled behaviorally using SIMULINK. For each model we present a description of the relationship between error and parameters of MOS FET, and those non-idealities have been transformed to currents. The required circuit specifcations are extracted from the behavioral simulation results. In order to get 10-bits of resolution for a 8-KHz signal bandwidth. an optimum choice was a second order modulator with an over-sampling ratio of 128 and sampling frequency of 2.048Mz. To test the design procedure validity the modulator has been designed with full differential switched current integrators in a 0.35pm double poly, four metal CMOS process. Circuit simulations indicated 50dB of peak SNDR from a single 3.3Vsupply and 18mW power consumption.

Citation Download Citation

Jierong Guo, Yigang He, Shengxue Tang, and Hongmin Li "Behavioral modeling to circuit design steps of switched-current second order sigma-delta modulator", Proc. SPIE 6358, Sixth International Symposium on Instrumentation and Control Technology: Sensors, Automatic Measurement, Control, and Computer Simulation, 635853 (30 October 2006); https://doi.org/10.1117/12.718256

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