Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

R. Hülsewede; H. Schulze; J. Sebastian; D. Schröder; J. Meusel; P. Hennig

doi:10.1117/12.705119

19 February 2007 Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

R. Hülsewede, H. Schulze, J. Sebastian, D. Schröder, J. Meusel, P. Hennig

Proceedings Volume 6456, High-Power Diode Laser Technology and Applications V; 645607 (2007) https://doi.org/10.1117/12.705119
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States

Abstract

There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 &mgr;s, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.

Citation Download Citation

R. Hülsewede, H. Schulze, J. Sebastian, D. Schröder, J. Meusel, and P. Hennig "Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 645607 (19 February 2007); https://doi.org/10.1117/12.705119

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