High reliability, high power arrays of 808 nm single mode diode lasers employing various quantum well structures

B. C. Qiu; O. Kowalski; S. D. McDougall; X. F. Liu; J. H. Marsh

doi:10.1117/12.763208

29 January 2008 High reliability, high power arrays of 808 nm single mode diode lasers employing various quantum well structures

B. C. Qiu, O. Kowalski, S. D. McDougall, X. F. Liu, J. H. Marsh

Author Affiliations +

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69090S (2008) https://doi.org/10.1117/12.763208
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Single mode laser diode arrays operating at 808 nm have been designed and fabricated using several different waveguide and quantum well combinations. In order to operate these devices at 200 mW per element a quantum well intermixing process has been used to render their facets non-absorbing and thus they do not suffer from mirror damage related failure. In this paper we demonstrate extremely high levels of reliability for GaAs and AlGaAs quantum well devices with arrays of 64 elements completing over 6000 hours continuous operation without any single laser element failure and a correspondingly low power degradation rate of <1% k/hr. In contrast we show extremely high power degradation rates for arrays using InGaAs and InAlGaAs 808 nm quantum wells laser arrays.

Citation Download Citation

B. C. Qiu, O. Kowalski, S. D. McDougall, X. F. Liu, and J. H. Marsh "High reliability, high power arrays of 808 nm single mode diode lasers employing various quantum well structures", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090S (29 January 2008); https://doi.org/10.1117/12.763208

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