Paper
29 April 2008 Measurement of atomic hydrogen flow density during GaAs surface cleaning
V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovski, S. V. Romanenko
Author Affiliations +
Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250A (2008) https://doi.org/10.1117/12.802357
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
The eight-channel thin-film resistive sensor of atomic hydrogen which in the automated mode allows to measure hydrogen atoms flow density in atomic-molecular mix in conditions of the low gas pressure (10-2-10-4 Pa) and under action of infra-red and visible radiation noises is described. The sensor can be used for measurement of AH flow density distribution on the large cross-section beam, including measurement during GaAs surface cleaning. The measurement range of atoms flow density is 5×1013-1016 at.cm-2s-1 and measurement time is 1-10 minutes. The resistor of the sensor is produced by microelectronics planar technology that provides an opportunity of the high space resolution at beam spatial distributions measurement.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovski, and S. V. Romanenko "Measurement of atomic hydrogen flow density during GaAs surface cleaning", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250A (29 April 2008); https://doi.org/10.1117/12.802357
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KEYWORDS
Sensors

Hydrogen

Resistors

Chemical species

Vanadium

Metals

Resistance

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