Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation

Oleg Zhevnyak

doi:10.1117/12.802534

29 April 2008 Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation

Oleg Zhevnyak

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251M (2008) https://doi.org/10.1117/12.802534
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

Monte Carlo model of electron transport in short channel MOSFETs at different temperatures ranging from -50° C (223 K) to +50° C (323 K) are proposed. MOSFETs with the channel length equal to 0.5, 0.2 and 0.1 μm are studied by using Monte Carlo simulation. Three mechanisms of temperature effect on electron properties are discussed for studied devices. Temperature influence on the values of drift velocity, mobility, electron energy and electric field in different parts of conducting channel is dealt with at studied conditions. It is shown that for MOSFET with the channel length equal to 0.1 μm obtained temperature dependencies demonstrate an appreciable divergence from ones for MOSFET with channel length equal to 0.5 μm.

Citation Download Citation

Oleg Zhevnyak "Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251M (29 April 2008); https://doi.org/10.1117/12.802534

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