Theoretical analysis of energy degradation of electrons in the resists

Minoru Toriumi

doi:10.1117/12.813940

1 April 2009 Theoretical analysis of energy degradation of electrons in the resists

Minoru Toriumi

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72732X (2009) https://doi.org/10.1117/12.813940
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

In the electron-beam lithography and extreme-ultraviolet lithography electrons above ionization energy collide with resist materials and bring out their ionizations and electronic excitations. The degradation mechanism of the electrons in resists plays the important role to determine the resist properties. The energy distribution of the electrons ejected in collisions with the resist molecules and the yields of ions and excited states of resist molecule, and the contributions of molecular orbitals to the yields were calculated by using the binary-collision theory and the continuous-slowing-down approximation. Phenol was used as a model of phenol resists. The results show that the electron impacts produce mainly secondary electrons with the lower energy. The selectivity in the ionization and excitation processes was found to increase with decreasing the incident energy. The outermost molecular orbital ionizes more dominantly with decreasing the incident energy. The lower incident energy preferentially generates the electrically-excited triplets than the singlets of resist molecules.

Citation Download Citation

Minoru Toriumi "Theoretical analysis of energy degradation of electrons in the resists", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732X (1 April 2009); https://doi.org/10.1117/12.813940

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