InGaN/GaN multi-quantum-well structures and GaN micromechanical structures on silicon-on-insulator substrates

L. S. Wang; S. Tripathy; S. J. Chua; S. Vicknesh; V. K. X. Lin; K. Y. Zang; J. Arokiaraj; J. N. Tan; A. Ramam

doi:10.1117/12.821474

19 February 2009 InGaN/GaN multi-quantum-well structures and GaN micromechanical structures on silicon-on-insulator substrates

L. S. Wang, S. Tripathy, S. J. Chua, S. Vicknesh, V. K. X. Lin, K. Y. Zang, J. Arokiaraj, J. N. Tan, A. Ramam

Author Affiliations +

Proceedings Volume 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration; 72790U (2009) https://doi.org/10.1117/12.821474
Event: Photonics and Optoelectronics Meetings, 2008, Wuhan, China

Abstract

We report growth of InGaN/GaN multi-quantum-wells (MQWs) structures and GaN layers on silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition (MOCVD). The growth conditions were tuned to realize blue-green emission peaks centered around 420-495 nm from such MQWs on SOI. X-ray diffraction, atomic force microscopy, scanning electron microscopy, and photoluminescence techniques were used to characterize the MQWs. Using a combination of selective dry etching techniques, GaN micromechanical structures are demonstrated on silicon-on-insulator (SOI) substrates. The dry releasing technique employs a controlled gas phase pulse etching with non-plasma xenon difluoride (XeF2), which selectively etches the Si overlayer of SOI, thus undercutting the GaN material on top. The mechanical properties of these released microstructures are characterized by micro-Raman spectroscopy. Such approach to realize multi-color light-emitting InGaN/GaN MQW structures and GaN micromechanical structures on SOI substrates is suitable for the integration of InGaN/GaN-based optoelectronic structures on SOI-based micro-opto-electromechanical systems (MOEMS) and sensors.

Citation Download Citation

L. S. Wang, S. Tripathy, S. J. Chua, S. Vicknesh, V. K. X. Lin, K. Y. Zang, J. Arokiaraj, J. N. Tan, and A. Ramam "InGaN/GaN multi-quantum-well structures and GaN micromechanical structures on silicon-on-insulator substrates", Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72790U (19 February 2009); https://doi.org/10.1117/12.821474

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