Paper
21 May 2009 Dynamics of band-edge photonic crystal lasers
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Abstract
Temporal characteristics of band-edge photonic crystal are precisely analyzed using a high-resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 μm and turn on times ranging from 17ps to 30ps are measured.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fabrice Raineri, Alejandro M. Yacomotti, and Rama Raj "Dynamics of band-edge photonic crystal lasers", Proc. SPIE 7354, Nonlinear Optics and Applications III, 73540K (21 May 2009); https://doi.org/10.1117/12.822301
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KEYWORDS
Photonic crystals

Laser crystals

Picosecond phenomena

Current controlled current source

Laser applications

Laser bonding

Nonlinear optics

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