High Si content anti-reflective coatings and their extension to a UV freeze dual patterning process

Joseph Kennedy; ZeYu Wu; Kyle Flanigan; Junyan Dai; Thomas Wallow

doi:10.1117/12.837205

11 December 2009 High Si content anti-reflective coatings and their extension to a UV freeze dual patterning process

Joseph Kennedy, ZeYu Wu, Kyle Flanigan, Junyan Dai, Thomas Wallow

Proceedings Volume 7520, Lithography Asia 2009; 75200O (2009) https://doi.org/10.1117/12.837205
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan

Abstract

As IC manufactures explore different paths to meet the resolution requirements for next generation technology, patterning schemes which utilize a double photoresist patterning process are under extensive evaluation. One dual patterning process under consideration uses a 172nm UV cure to render the first photoresist pattern insoluble to the casting solvents and developer chemistries used to define the second photoresist pattern. Line-space resist patterning is used to understand the effect of the 172nm UV light on the SiBARC, under-layer film stack and how it influences the patterned CD. This is followed by cross-grid and pitch-split double patterning using 172 nm UV light of varying dose to freeze the first photoresist layer patterned using a tri-layer film configuration. In the final section we discuss the effects of the 172nm UV cure on the SiBARC film thickness and optical properties. Simulations are run to understand the change in the focus-exposure process window due to changes in the SiBARC film due to the 172nm UV cure.

Citation Download Citation

Joseph Kennedy, ZeYu Wu, Kyle Flanigan, Junyan Dai, and Thomas Wallow "High Si content anti-reflective coatings and their extension to a UV freeze dual patterning process", Proc. SPIE 7520, Lithography Asia 2009, 75200O (11 December 2009); https://doi.org/10.1117/12.837205

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