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Feasibilities to increase the radiation resistance of multijunction solar cells in using Bragg reflectors have been shown,
and also the solar cell structure optimum parameters and the optical reflector design have been chosen. Spectral
characteristics and photocurrent values of single- and multi-junction SCs with and without Bragg reflectors at different
Ga(In)As subcell thicknesses have been simulated. The dependencies of the solar cell photocurrent on the minority
charge carrier diffusion length in the Ga(In)As subcell base at different subcell thicknesses have been investigated for
structures both with and without Bragg reflectors. A good fit of the calculated dependencies to the experimental ones
have been obtained. Two designs of Bragg reflectors for multijunction solar cells have been proposed, which allow
ensuring in the Ga(In)As subcell base an effective collection of minority charge carriers at the decrease of their diffusion
length caused by radiation treatment.
V. Emelyanov,N. Kaluzhniy,S. Mintairov,M. Shvarts, andV. Lantratov
"Improvement of radiation resistance of multijunction solar cells by application of Bragg reflectors", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210D (26 February 2010); https://doi.org/10.1117/12.853750
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V. Emelyanov, N. Kaluzhniy, S. Mintairov, M. Shvarts, V. Lantratov, "Improvement of radiation resistance of multijunction solar cells by application of Bragg reflectors," Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210D (26 February 2010); https://doi.org/10.1117/12.853750