Temperature-frequency characteristics of silicon micro-cantilever and measurement techniques in high temperature environment

Dongsheng She; Xiagdong Wang; Xiwen Zhang; Liding Wang

doi:10.1117/12.885680

31 December 2010 Temperature-frequency characteristics of silicon micro-cantilever and measurement techniques in high temperature environment

Dongsheng She, Xiagdong Wang, Xiwen Zhang, Liding Wang

Author Affiliations +

Proceedings Volume 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation; 754468 (2010) https://doi.org/10.1117/12.885680
Event: Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 2010, Hangzhou, China

Abstract

In order to study the dynamic characteristics of silicon micro-cantilever in high temperature environment, the relationship between the first-order resonance frequency of micro-cantilever and the environment temperature was theoretically analyzed. The dynamic measurement equipment was developed for the MEMS microstructure in the high temperature environment. Both the base excitation with PZT and the electrical discharge excitation method were adopted to excite the micro-cantilever under test. The impulse response signal of the microstructure can be obtained using the Laser Doppler Vibrometer. The temperature-frequency characteristics of silicon micro-cantilever has been experimentally studied. Test results show that the resonance frequency of silicon micro-cantilever slightly decreases with the increasing temperature, and it is almost a linear dependence between the change in temperature and the change in resonance frequency, which is consistent with the result of theoretical analysis.

Citation Download Citation

Dongsheng She, Xiagdong Wang, Xiwen Zhang, and Liding Wang "Temperature-frequency characteristics of silicon micro-cantilever and measurement techniques in high temperature environment", Proc. SPIE 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 754468 (31 December 2010); https://doi.org/10.1117/12.885680

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