Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells

Yi-Lu Chang; Zetian Mi

doi:10.1117/12.843258

12 March 2010 Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells

Yi-Lu Chang, Zetian Mi

Author Affiliations +

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76020A (2010) https://doi.org/10.1117/12.843258
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We report on the molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells. Vertically aligned p-doped-intrinsic-n-doped (p-i-n) InN nanowires spontaneously formed on n-type Si(111) substrates as well as n-i InN nanowires spontaneously formed on p-Si(111) were demonstrated. With the use of an in situ deposited In seeding layer, such InN nanowires exhibit non-tapered morphology. InN nanowire solar cells display a rectifying ratio of larger than 1,000 under dark, which provides a strong evidence of successful p-doping of InN nanowires. We measured a short-circuit current density of ~ 85 mA/cm² and a power conversion efficiency of ~ 1.62% under AM 1.5G illumination at approximately 100 mW/cm². Further improvement in the device performance is being investigated by optimizing the growth and fabrication process.

Citation Download Citation

Yi-Lu Chang and Zetian Mi "Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020A (12 March 2010); https://doi.org/10.1117/12.843258

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