Influence on digital photolithography intensity by collimated Gaussian beam

Shuai He; Yiqing Gao; Ningning Luo; Yufang Rao

doi:10.1117/12.864087

22 October 2010 Influence on digital photolithography intensity by collimated Gaussian beam

Shuai He, Yiqing Gao, Ningning Luo, Yufang Rao

Proceedings Volume 7657, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 76570L (2010) https://doi.org/10.1117/12.864087
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

The theory of Gaussian beam expansion and collimation has been investigated. Based on Collins diffraction integral and matrix decomposition method, the propagation characteristics of Gaussian beam passing through beam expansion and collimation system is analyzed. The corresponding mathematical model is established. Simulations results indicate that the optical field distribution behind beam expansion and collimation system is still with Gaussian attribute. Then we demonstrate the optical field of beam with Gaussian attribute passing through 2-D sinusoidal grating. Finally, the step depth error of binary element is evaluated under illumination of Gaussian beam. The theoretical analysis and simulation results have reference for the establishment of digital lithography model and the optimization of beam expansion and collimation system.

Citation Download Citation

Shuai He, Yiqing Gao, Ningning Luo, and Yufang Rao "Influence on digital photolithography intensity by collimated Gaussian beam", Proc. SPIE 7657, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 76570L (22 October 2010); https://doi.org/10.1117/12.864087

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KEYWORDS

Collimation

Gaussian beams

Lithography

Optical simulations

Beam propagation method

Binary data

Photoresist materials

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