Paper
3 May 2010 VPD PbSe technology: the road toward the industrial maturity
Rodrigo Linares Herrero, M. Teresa Montojo Supervielle, Arturo Baldasano Ramírez
Author Affiliations +
Abstract
During the last 15 years, the Spanish MoD laboratories (CIDA) have developed the VPD PbSe technology (Vapor Phase Deposited). The excellent properties of the material (sensitivity in the MWIR band, high performance in uncooled operation, and photodetector), together with a new method of processing the material based on PbSe deposition by phase vapor, which is fully compatible with Si-CMOS technology, have opened tremendous perspectives with multiple applications for the detector where fast responses and low cost are main requirements. In 2008 the VPD manufacturing technology was transferred to New Infrared Technologies, S.L. (NIT) This paper shows the actual situation of the technology, describing the last advances reached with the new 32x32 uncooled imager, able to provide frame rates above 1,000 fps. The work also describes the industrial strategy adopted for bringing the technology towards the industrialization and the roadmap of the technology from the point of view of future devices and systems.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rodrigo Linares Herrero, M. Teresa Montojo Supervielle, and Arturo Baldasano Ramírez "VPD PbSe technology: the road toward the industrial maturity", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766034 (3 May 2010); https://doi.org/10.1117/12.850174
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Cited by 5 scholarly publications.
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KEYWORDS
Sensors

Packaging

Silicon

Staring arrays

Mid-IR

Analog electronics

Electronics

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