The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage

Daming Zhou; Wangping Wang; Ning Li; Bo Zhang; Xiaoshuang Chen; Wei Lu

doi:10.1117/12.900814

8 September 2011 The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage

Daming Zhou, Wangping Wang, Ning Li, Bo Zhang, Xiaoshuang Chen, Wei Lu

Proceedings Volume 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies; 81911R (2011) https://doi.org/10.1117/12.900814
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

The light response mechanism of quantum dot resonant tunneling diode (QDRTD) has been investigated experimentally. The QDRTD is constructed by an InAs layer of self-assembled quantum-dots (QDs) being placed on the top of AlAs barrier layer. The work bias of the device is set in the positive differential resistance region. It is found that the charging InAs quantum dots can effectively control the carrier transport properties of the device. The photo-excited holes can lower the electrostatic energy of the quantum dot state. Thus, the electrons in the emitter can easily tunnel to the collector, and the current increases under illumination. It is found that the increment (or decrement) of photocurrent depends on the amount of photo-excited holes captured in the dots. Furthermore, due to the quantum multiplication effect, the QDRTD can be applied as a photon counting device.

Citation Download Citation

Daming Zhou, Wangping Wang, Ning Li, Bo Zhang, Xiaoshuang Chen, and Wei Lu "The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage", Proc. SPIE 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, 81911R (8 September 2011); https://doi.org/10.1117/12.900814

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