Modeling the effects of acid amplifiers on photoresist stochastics

Gregg M. Gallatin; Patrick P. Naulleau; Robert L. Brainard

doi:10.1117/12.917006

23 March 2012 Modeling the effects of acid amplifiers on photoresist stochastics

Gregg M. Gallatin, Patrick P. Naulleau, Robert L. Brainard

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83221C (2012) https://doi.org/10.1117/12.917006
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The tradeo between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeo, continues to be a dicult challenge, especially for EUV lithography. Acid ampliers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplication. Using this model the impact acid ampliers have on the RLS tradeo is studied under a variety of resist conditions.

Citation Download Citation

Gregg M. Gallatin, Patrick P. Naulleau, and Robert L. Brainard "Modeling the effects of acid amplifiers on photoresist stochastics", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221C (23 March 2012); https://doi.org/10.1117/12.917006

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