Paper
22 February 2012 Dispersion management in a passively mode-locked VECSEL at 1.55 μm
Zhuang Zhao, Sophie Bouchoule, Jean Decobert, Elisabeth Galopin, Jean-Christophe Harmand, Jean-Louis Oudar
Author Affiliations +
Abstract
Low timing jitter, sub picoseconds pulse source at 1.55 μm is demonstrated by integrating a fast saturable absorber mirror (SESAM) with an optically-pumped mode-locked vertical-extended-cavity-surface emitting laser (ML-VECSEL). In such a soliton-like pulse-shaping mechanism, short pulse generation requires to control the group delay dispersion (GDD) in the cavity in order to balance the nonlinear phase shift induced by strong semiconductor gain and absorber saturation. By using selective etching technology, we controlled the SESAM optical cavity by varying from a resonant to anti-resonant configuration (which corresponds to a GDD variation from -2000fs2 to +500fs2 at 1.55 μm) in the passive mode-locking cavity. Using the same VECSEL chip, we observed that the mode-locked pulse duration could be reduced from several ps to less than one ps with a resonance managed SESAM.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhuang Zhao, Sophie Bouchoule, Jean Decobert, Elisabeth Galopin, Jean-Christophe Harmand, and Jean-Louis Oudar "Dispersion management in a passively mode-locked VECSEL at 1.55 μm", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 833308 (22 February 2012); https://doi.org/10.1117/12.919018
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mode locking

Mirrors

Picosecond phenomena

Modulation

Reflectivity

Etching

Semiconductors

Back to Top