Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals

Valery A. Zhukov; V. G. Maslov

doi:10.1117/12.2017306

8 January 2013 Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals

Valery A. Zhukov, V. G. Maslov

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870017 (2013) https://doi.org/10.1117/12.2017306
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

A model of "parallel" metal-graphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir₅₅ nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 10¹¹ Hz and size of 32x32x12 nm³. It is shown that in this model of nanotransistor a source-drain potential is equal to 1.2 V, the threshold for the opening of the gate U_G is equal to 0.4 V and the total current in parallel connected 250 elementary single-electron nanotransistors - crystals of Ir₅₅ is 1.5 * 10^-5 A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is K_q = 1, and the power gain is equal to K_P ~ 3. Such nanotransistor at using inductive-capacitive load could be an element of the integrated circuit - the generator of electro-magnetic waves with a wavelength of 1.2 mm and power density ~ 10⁴ W/cm².

Citation Download Citation

Valery A. Zhukov and V. G. Maslov "Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870017 (8 January 2013); https://doi.org/10.1117/12.2017306

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