Reactive etching of a novel phase change material Si2Sb2Te3

Mengjiao Xia; Feng Rao; Zhitang Song; Kun Ren; Liangcai Wu; Bo Liu

doi:10.1117/12.2016674

24 January 2013 Reactive etching of a novel phase change material Si₂Sb₂Te₃

Mengjiao Xia, Feng Rao, Zhitang Song, Kun Ren, Liangcai Wu, Bo Liu

Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820Z (2013) https://doi.org/10.1117/12.2016674
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China

Abstract

A novel phase change material, Si₂Sb₂Te₃ has been reported to show good phase change abilities. Etching of this material is a critical step in the fabrication of phase change memory devices. In this paper, the characteristics of Si₂Sb₂Te₃ etched in CF₄/Ar atmosphere are investigated. The influence of the etching rate and surface roughness with different CF₄/Ar ratio, pressure, and power are systematically studied. Furthermore, our X-ray photoelectron spectroscopy test results show that Te is the bottleneck to accelerating the etching rate.

Citation Download Citation

Mengjiao Xia, Feng Rao, Zhitang Song, Kun Ren, Liangcai Wu, and Bo Liu "Reactive etching of a novel phase change material Si₂Sb₂Te₃", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820Z (24 January 2013); https://doi.org/10.1117/12.2016674

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