Paper
6 September 2013 Using fiber optic probes for photoluminescence and evaluation of an InGaN/GaN epi-wafer
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Abstract
Photoluminescence is one of the methods used for analyzing the optical characteristics of materials. For components in solid-state lighting such as GaN-based LEDs, the use of an LED structure configuration on a patterned sapphire substrate has shown to be highly effective in improving light-extraction efficiency. We proposed a compact and simple photoluminescence measurement system based on fiber-optic probes that can be scanned over a 20 × 20 μm2 area with a high spatial resolution. We applied the system in morphological study of InGaN/GaN epitaxial layers for LED applications. With this system, we obtained peak intensity, peak wavelength, and full width at half maximum of the emission spectrum.
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Woohyun Jung, Jongki Kim, Hang-Eun Joe, Byung-Kwon Min, and Kyunghwan Oh "Using fiber optic probes for photoluminescence and evaluation of an InGaN/GaN epi-wafer", Proc. SPIE 8839, Dimensional Optical Metrology and Inspection for Practical Applications II, 88390C (6 September 2013); https://doi.org/10.1117/12.2024634
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KEYWORDS
Light emitting diodes

Luminescence

Fiber optics

Spatial resolution

Optical fibers

Patterned sapphire substrate

Single mode fibers

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