Paper
25 July 2013 Characterization of Diamond-like Carbon (DLC) films deposited by RF ICP PECVD method
Waldemar Oleszkiewicz, Wojciech Kijaszek, Jacek Gryglewicz, Adrian Zakrzewski, Krzysztof Gajewski, Daniel Kopiec, Paulina Kamyczek, Ewa Popko, Marek Tłaczała
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Proceedings Volume 8902, Electron Technology Conference 2013; 89022H (2013) https://doi.org/10.1117/12.2031066
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
The work presents the results of a research carried out with Plasmalab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The deposition processes were carried out in CH4 or CH4/H2 atmosphere and the state of the plasma was investigated by the OES method. The RF plasma was capacitively coupled by 13.56 MHz generator with supporting ICP generator (13.56 Mhz). The deposition processes were conducted in constant value of RF generator’s power and resultant value of the DC Bias. The power values of RF generator was set at 70 W and the power values of ICP generator was set at 300 W. In this work we focus on the influence of DLC film’s thickness on optical, electrical and structural properties of the deposited DLC films. The quality of deposited DLC layers was examined by the Raman spectroscopy, AFM microscopy and spectroscopic ellipsometry. In the investigated DLC films the calculated sp3 content was ranging from 60 % to 70 %. The films were characterized by the refractive index ranging from 2.03 to 2.1 and extinction coefficient ranging from 0.09 to 0.12.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Waldemar Oleszkiewicz, Wojciech Kijaszek, Jacek Gryglewicz, Adrian Zakrzewski, Krzysztof Gajewski, Daniel Kopiec, Paulina Kamyczek, Ewa Popko, and Marek Tłaczała "Characterization of Diamond-like Carbon (DLC) films deposited by RF ICP PECVD method ", Proc. SPIE 8902, Electron Technology Conference 2013, 89022H (25 July 2013); https://doi.org/10.1117/12.2031066
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KEYWORDS
Deposition processes

Raman spectroscopy

Plasma enhanced chemical vapor deposition

Refractive index

Carbon

Hydrogen

Plasma

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