Paper
28 March 2014 Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory
Katsuyoshi Kodera, Hironobu Sato, Hideki Kanai, Yuriko Seino, Naoko Kihara, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Yoshiaki Kawamonzen, Tsukasa Azuma
Author Affiliations +
Abstract
We proposed a new concept of “defect-aware process margin.” Defect-aware process margin was evaluated by investigating the energy difference between the free-energy of the most stable state and that of the first metastable state. The energy difference is strongly related to the defect density in DSA process. As a result of our rigorous simulations, the process margin of the pinning layer width was found to be: (1) worse when the pinning layer affinity is too large, (2) better when the background affinity has the opposite sign of the pinning layer affinity, and (3) better when the top of the background layer is higher than that of the pinning layer by 0.1L0.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsuyoshi Kodera, Hironobu Sato, Hideki Kanai, Yuriko Seino, Naoko Kihara, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Yoshiaki Kawamonzen, and Tsukasa Azuma "Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 904926 (28 March 2014); https://doi.org/10.1117/12.2046159
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Cited by 5 scholarly publications.
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KEYWORDS
Monte Carlo methods

Directed self assembly

Lithography

Particles

Systems modeling

Thin film coatings

Computer simulations

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