Mask contribution to intra-field wafer overlay

William Chou; Hsien-Min Chang; Chao Yin Chen; M. Wagner; K.-D. Roeth; S. Czerkas; M. Ferber; M. Daneshpanah; F. Laske; R. Chiang; S. Klein

doi:10.1117/12.2049000

2 April 2014 Mask contribution to intra-field wafer overlay

William Chou, Hsien-Min Chang, Chao Yin Chen, M. Wagner, K.-D. Roeth, S. Czerkas, M. Ferber, M. Daneshpanah, F. Laske, R. Chiang, S. Klein

Author Affiliations +

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90501Q (2014) https://doi.org/10.1117/12.2049000
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Shrinking wafer overlay budgets raise the importance of careful characterization and control of the contributing components, a trend accelerated by multi-patterning immersion lithography [1]. Traditionally, the mask contribution to wafer overlay has been estimated from measurement of a relatively small number of standard targets. There are a number of studies on test masks and standard targets of the impact of mask registration on wafer overlay [2],[3]. In this paper, we show the value of a more comprehensive characterization of mask registration on a product mask, across a wide range of spatial frequencies and patterns. The mask measurements will be used to obtain an accurate model to predict mask contribution to wafer overlay and correct for it.

Citation Download Citation

William Chou, Hsien-Min Chang, Chao Yin Chen, M. Wagner, K.-D. Roeth, S. Czerkas, M. Ferber, M. Daneshpanah, F. Laske, R. Chiang, and S. Klein "Mask contribution to intra-field wafer overlay", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90501Q (2 April 2014); https://doi.org/10.1117/12.2049000

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